| Material, K value |
Standard X, Y(inches) |
Standard thickness(mils) |
Available thickness(mil) |
| Aluminum Nitride, 9.0 |
2 x 2 |
5, 10, 15, 25, 40 |
5-50 |
| Alumina, 9.9 |
2 x 2 |
5, 10, 15, 20 |
5-25 |
| Quartz, 3.8 |
2 inch round |
10 |
5-25 |
| X7R B, 1200 |
1 x 1 |
5, 10 |
4-25 |
| X7R X, 2700 |
1 x 1 |
5, 10 |
4-25 |
| X7R T, 4000 |
1 x 1 |
7, 10 |
4-25 |
| GBBL A, 20,000 |
1.4 x 1.4 |
7, 10 |
5-15 |
| GBBL A, 60,000 |
1.4 x 1.4 |
7, 10 |
5-15 |
NOTE: On Alumina and Aluminum Nitride, typical surface is as-fired condition, polish to 2 µ-inch is available
| Metal |
Deposition Method |
Thickness(Angstroms) |
Typical Use |
| Titanium(Ti) |
Sputter Deposition |
200-1,000 |
Barrier, Adhesion |
| Titanium Nitride(TiN) |
Reactive Sputter Dep |
200-1,000 |
Barrier, Adhesion |
| Titanium Tungsten(TiW) |
Sputter Deposition |
200-2,000 |
Barrier, Adhesion |
| TiW Nitride(TiWN) |
Reactive Sputter Dep |
200-2,000 |
Barrier, Adhesion |
| Nickel(Ni) |
Sputter Deposition |
200-2,000 |
Barrier for solder die attach |
| Nickel(Ni) |
Plating |
5,000-25,000 |
Barrier for solder die attach |
| Gold(Au) |
Sputter Deposition |
1,000-10,000 |
Die attach, Wirebond |
| Gold(Au) |
Plating |
5,000-75,000 |
Die attach, Wirebond |
| Gold/Tin(AuSn-80/20) |
NA |
5,000-50,000 |
Eutectic High Reliability solder |
| Copper(Cu) |
Sputter Deposition |
1,000-20,000 |
Conductor |
| Tantalum(Ta) |
Sputter Deposition |
200-5,000 |
Barrier, Adhesion |
| Tantalum Nitride(TaN) |
Reactive Sputter Dep |
500-5,000 |
Resistor(Typical 1000A, 50Ω/□) |
Others available upon request
| Feature Available |
Min. Width(µm)* |
| Conductor Line |
25 |
| Space |
25 |
| Line/Space Tolerance |
5 |
| Laser drilled holes |
75 |
| Plated Vias |
75 |
| 2nd layer alignment |
+/- 7 |
| 50Ω/□ Resistor |
25 |
| AuSn(80/20) |
Blanket |
| AuSn(80/20) |
75 |
*-> μm = microns = 10-6m 25.4μm=1 mil
| Substrate Material |
MKaterial Code |
K |
Temperature Coefficient |
Operating Temperature |
Dissipation Factor |
| ALN * | F | 8.8 | 170 W/M deg K (Th. Cond.) | -55 to +125 deg. C | |
| Alumina * | G | 9.9 | P120 +/- 30 ppm / deg C | -55 to +125 deg. C | |
| Titanate Based | C | 23 | 0 +/- 30 ppm / deg C | -55 to +125 deg. C | < 0.15% @ 1 MHz |
| Titanate Based |
K |
37 | 0 +/- 30 ppm / deg C | -55 to +125 deg. C | < 0.15% @ 1 MHz |
| Titanate Based |
N |
80 | 0 +/- 30 ppm / deg C | -55 to +125 deg. C | < 0.15% @ 1 MHz |
| Titanate Based |
U |
120 |
-750 +/- 120 ppm / deg C | -55 to +125 deg. C |
< 0.25% @ 1 MHz |
| Titanate Based |
V |
160 |
-1500 +/- 300 ppm / deg C | -55 to +125 deg. C |
< 0.25% @ 1 MHz |
| Titanate Based |
R |
280 |
-750 +/- 120 ppm / deg C | -55 to +125 deg. C |
< 0.25% @ 1 MHz |
| Titanate Based |
L |
350 |
-750 +/- 120 ppm / deg C | -55 to +125 deg. C |
< 150% @ 1 MHz |
| Titanate Based |
D |
600 |
+/- 10% (-55 to +125 C) | -55 to +125 deg. C |
< 2.50% @ 1 MHz |
| Titanate Based |
B |
1200 | +/- 10% (-55 to +125 C) | -55 to +125 deg. C |
< 2.50% @ 1 MHz |
| Titanate Based |
W |
2000 | +/- 10% (-55 to +125 C) | -55 to +125 deg. C |
< 2.50% @ 1 MHz |
| Titanate Based |
X |
2700 |
+/- 15% (-55 to +125 C) | -55 to +125 deg. C |
< 2.50% @ 1 MHz |
| Titanate Based |
T |
4000 |
+/- 15% (-55 to +125 C) | -55 to +125 deg. C |
< 2.50% @ 1 MHz |
| Titanate Based |
Z |
8000 |
+22 / -56% (+10 to +85 C) | -55 to +125 deg. C |
< 4.00% @ 1 MHz |
| Titanate Based |
Y |
12000 |
+22 / -82% (-30 to +85 C) | -55 to +125 deg. C |
< 4.00% @ 1 MHz |
